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| TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement-mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -11 -44 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation W 1.0 W Weight: 0.080 g (typ.) 157 -11 0.19 150 -55 to 150 mJ A mJ C C Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-03-12 TPC8108 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8108 TYPE Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = -11 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-03-12 TPC8108 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS -10 V 4.7 0V ID = -5.5 A VOUT RL = 2.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -5.5 A VGS = -10 V, ID = -5.5 A VDS = -10 V, ID = -5.5 A Min -30 -15 -0.8 12 Typ. 18.5 9.5 24 3510 250 600 7 16 66 230 77 7.0 20 Max 10 -10 -2.0 23 13 ns nC pF Unit A A V V m S VDD -15 V - < 1%, tw = 10 s Duty = VDD -24 V, VGS = -10 V, - ID = -11 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -11 A, VGS = 0 V Min Typ. Max -44 1.2 Unit A V 3 2002-03-12 TPC8108 ID - VDS -20 -10 -16 -8 -6 -2.4 -12 -2.2 -8 -4 -3 -2.8 -2.6 Common source Ta = 25C Pulse test -50 -10 -4 -6 -8 ID - VDS Common source Ta = 25C Pulse test -3 -2.8 -30 -2.6 -20 -2.4 -2.2 -10 VGS = -2 V -40 (A) ID Drain current -4 VGS = -2 V Drain current ID (A) 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -50 Common source VDS = -10 V Pulse test -0.5 VDS - VGS Common source Ta = 25C Pulse test -40 (V) Drain-source voltage VDS -0.4 ID (A) -30 -0.3 Drain current -20 -0.2 ID = -11 A -0.1 -5.5 -2.5 -10 100 0 0 -1 25 Ta = -55C -2 -3 -4 -5 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 100 25 30 Ta = -55C 100 10 RDS (ON) - ID (S) Drain-source ON resistance RDS (ON) (m) Yfs 30 VGS = -4 V 10 -10 Forward transfer admittance 3 3 1 Common source VDS = -10 V Pulse test -0.3 -1 -3 -10 -30 -100 1 Common source Ta = 25C Pulse test -0.3 -1 -3 -10 -30 -100 0.3 -0.1 0.3 -0.1 Drain current ID (A) Drain current ID (A) 4 2002-03-12 TPC8108 RDS (ON) - Ta 50 Common source 40 Pulse test -100 -10 IDR - VDS -5 -3 -10 Drain-source ON resistance RDS (ON) (m) ID = -11 A, -5.5 A, -2.5 A 20 VGS = -4 V 10 -10 0 -80 ID = -11 A, -5.5 A, -2.5 A Drain reverse current 30 IDR (A) -1 -1 VGS = 0 V -40 0 40 80 120 160 -0.1 0 Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 -2.0 Vth - Ta Common source VDS = -10 V ID = -1 mA Pulse test 3000 Ciss Gate threshold voltage Vth (V) -100 -1.6 (pF) 1000 Coss Crss -1.2 Capacitance C 300 Common source 100 VGS = 0 V f = 1 MHz Ta = 25C 30 -0.1 -0.3 -1 -0.8 -0.4 -3 -10 -30 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) PD - Ta 2.0 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) Dynamic input/output characteristics -30 Common source ID = -11 A VDD = -24 V -20 Ta = 25C Pulse test -20 -30 (W) (V) 1.6 PD Drain-source voltage VDS Drain power dissipation (2) 0.8 -12 -10 -6 VDS -12 -6 VGS VDD = -24 V -10 0.4 0 0 40 80 120 160 200 0 0 20 40 60 80 0 100 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2002-03-12 Gate-source voltage 1.2 t = 10 s VGS (V) TPC8108 rth - tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b) Normalized transient thermal impedance rth (C/W) (2) (2) (1) 100 t = 10 s 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area -100 ID max (pulse) * 1 ms* (A) -10 10 ms* Drain current ID -1 -0.1 -0.01 -0.01 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -1 VDSS max -10 -100 Drain-source voltage VDS (V) 6 2002-03-12 TPC8108 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2002-03-12 |
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